技术工艺
制程能力
|
Process/Key items |
Standard |
Minimum～Maximum |
Engrg capability |
|
Wafer diameter |
4, 5, 6, 8, 12 inch |
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|
Scribe line |
60, 80um |
45um |
40um（30um） |
|
Die size |
- |
0.5x0.5～25x25mm |
0.15x0.15mm |
|
Die thickness |
0.20,0.25mm |
0.075～0.60mm |
0.05mm |
|
Die Bonding |
6 dies lies; 4 dies stacked; COMS/SOI/GaAs/GaN; FC |
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|
Die bond adhesive |
Dispense, Printing, DAF, Soldering, Sintering |
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|
FC bumping pitch |
150,250um |
100～um |
90um |
|
FC bumping dia. |
75,150um |
60～um |
40um |
|
Wire type& dia. |
Au-0.6~1.0mil; Ag-0.7~1.0mil; Cu-0.8~2.0mil |
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|
BPO |
60x60um |
40x40um |
30x30um |
|
BPP |
70um |
45～um |
35um |
|
Loop height |
125um |
40～350um |
35um, 400um |
|
Mold Cap |
0.55mm |
0.365, 0.55, 0.75, 1.2, 1.5mm |
0.06 (with BG) |
|
Solder ball size |
0.30 , 0.45mm |
0.15～0.76mm |
0.10mm |
|
Solder ball height |
0.29, 0.39mm |
0.05～0.65mm |
Same as left |
|
SMD size |
0201, 0402 |
01005～0804 (By Chase) |
6x6x4mm |